Project information
The morfology of the interfaces in heteroepitaxial multilayers
- Project Identification
- GA202/97/0003
- Project Period
- 1/1997 - 1/1999
- Investor / Pogramme / Project type
-
Czech Science Foundation
- Standard Projects
- MU Faculty or unit
- Faculty of Science
- Cooperating Organization
-
Institute of Physics of the ASCR, v. v. i.
- Responsible person RNDr. Zbyněk Šourek, CSc.
The morphology of the interfaces in epitaxial multilayers is decisive for their optical and electrical peformance. The interfaces in multilayers of the type III-V and SiGe/Si multilayers grown by MBE and MOVPE methods will be studied within the project. High-resolution x-ray diffractometry and x-ray reflectometry will be used both in the specular and in the non-specular regimes. The results will be compared with the observations of the interfaces by local techniques (tunneling microscopy, TEM) and by op
Publications
Total number of publications: 5
1999
-
Lateral arrangement of self-assembled quantum dots in an SiGe/Si supertattice
Semicond. Sci. Technol., year: 1999, volume: 32(1999), edition: -
-
X-ray diffraction from quantum wires and quantum dots
Journal of Materials Science: Materials in Electronics, year: 1999, volume: (10)1999, edition: -
1998
-
Highly regular self-organization of step bunches during growth of SiGe on Si(113)
Appl. Phys. Lett., year: 1998, volume: 73(1998), edition: -
-
High-resolution x-ray scattering from thin films and multilayers
Year: 1998, number of pages: 256 s.
-
X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers
Semicond. Sci. Technol., year: 1998, volume: 13(1998), edition: -